Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures
Thibaut Chailloux
,
Cyril Calvez
,
Dominique Tournier
,
Dominique Planson
Symposium de Génie Electrique (SGE'14) , Jul 2014, Cachan, France
Communication dans un congrès
hal-01065281v1
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A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET
F Chevalier
,
G Grosset
,
L Dupuy
,
Dominique Tournier
,
Dominique Planson
,
et al.
HETECH , Nov 2012, Barcelone, France
Communication dans un congrès
hal-01113179v1
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Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)
Pierre Lefranc
,
Dominique Planson
,
Hervé Morel
,
Dominique Bergogne
Article dans une revue
istex
hal-00476201v1
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications
F. Nallet
,
A. Senes
,
Dominique Planson
,
Marie-Laure Locatelli
,
J.P. Chante
,
et al.
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings , May 2000, Toulouse, France. pp.287-290,
⟨10.1109/ISPSD.2000.856827⟩
Communication dans un congrès
hal-02972084v1
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Current sensing for SiC Power Devices
D. Tournier
,
Miquel Vellvehi
,
Philippe Godignon
,
Josep Montserrat
,
Dominique Planson
,
et al.
Article dans une revue
hal-04369348v1
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OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
S.R. Wang
,
Christophe Raynaud
,
Dominique Planson
,
Mihai Lazar
,
Jean-Pierre Chante
Article dans une revue
hal-04091213v1
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Design of a 600 V silicon carbide vertical power MOSFET
Dominique Planson
,
Marie-Laure Locatelli
,
F. Lanois
,
Jean-Pierre Chante
Materials Science and Engineering: B , 1999, 61 (2), pp.497-501
Article dans une revue
hal-00141536v1
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Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices
Dominique Planson
,
Camille Sonneville
,
Pascal Bevilacqua
,
Dominique Tournier
Communication dans un congrès
hal-04238355v1
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Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes
Hassan Hamad
,
Pascal Bevilacqua
,
Christophe Raynaud
,
Dominique Planson
Communication dans un congrès
hal-01388043v1
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Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices
Christophe Raynaud
,
Dominique Tournier
,
Hervé Morel
,
Dominique Planson
Article dans une revue
hal-02186368v1
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OBIC Technique Applied to Wide Bandgap Semiconductors
Dominique Planson
,
Hassan Hamad
40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies , Jun 2016, Aveiro, Portugal
Communication dans un congrès
hal-01388036v1
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Short-Circuit Capability Exploration of Silicon Carbide Devices
Maxime Berthou
,
Dominique Planson
,
Dominique Tournier
Article dans une revue
hal-02133674v1
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Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures
A. A. Lebedev
,
S. Ortolland
,
Christophe Raynaud
,
Marie-Laure Locatelli
,
Dominique Planson
,
et al.
Semiconductors , 1997, 31 (7), pp.735-737
Article dans une revue
hal-00141601v1
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Characterization and VHDL-AMS modeling of SiC-JFET transistor
Rami Mousa
,
Dominique Planson
,
Hervé Morel
Article dans une revue
istex
hal-00747438v1
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On-Chip Temperature Monitoring of a SiC Current Limiter
Dominique Tournier
,
Phillippe Godignon
,
José Millan
,
Dominique Planson
,
Jean-Pierre Chante
,
et al.
Article dans une revue
hal-02966528v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests
Hassan Hamad
,
Dominique Tournier
,
Jean-Michel Reynes
,
Olivier Perrotin
,
Régis Meuret
,
et al.
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis , Oct 2023, Toulouse, France
Communication dans un congrès
hal-04240602v1
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High temperature operating converter
Dominique Bergogne
,
Pascal Bevilacqua
,
Dominique Planson
,
Hervé Morel
4th CIPS , Jun 2006, Naples, Italy. pp.201-204
Communication dans un congrès
hal-00413394v1
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Dominique Tournier
,
Phillippe Godignon
,
Josep Montserrat
,
Dominique Planson
,
Jean-Pierre P Chante
,
et al.
ICSCRM , Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02471274v1
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Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation
Christophe Raynaud
,
Duy Minh Nguyen
,
Nicolas Dheilly
,
Dominique Tournier
,
Pierre Brosselard
,
et al.
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications , Wiley, 319-340 (chapitre 12), 2009
Chapitre d'ouvrage
hal-00661529v1
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Experimental determination of impact ionization coefficients in 4H-SiC
Duy Minh Nguyen
,
Christophe Raynaud
,
Nicolas Dheilly
,
Mihai Lazar
,
Dominique Tournier
,
et al.
Article dans une revue
istex
hal-00661429v1
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Periphery protection for silicon carbide devices: State of the art and simulation
Dominique Planson
,
Marie-Laure Locatelli
,
S. Ortolland
,
Jean-Pierre Chante
,
H. Mitlehner
,
et al.
Materials Science and Engineering: B , 1997, 46 (1-3), pp.210-217
Article dans une revue
hal-00141603v1
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A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
Dominique Tournier
,
Pascal Bevilacqua
,
Pierre Brosselard
,
Dominique Planson
Communication dans un congrès
hal-00496976v1
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A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
Pierre Brosselard
,
Thierry Bouchet
,
Dominique Planson
,
Sigo Scharnholz
,
Gontran Pâques
,
et al.
Article dans une revue
hal-04345858v1
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Application of the Double Source Switching Test to GaN HEMTs
Tamiris Grossl Bade
,
Maroun Alam
,
Hervé Morel
,
Dominique Planson
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe) , Sep 2023, Aalborg, Denmark
Communication dans un congrès
hal-04225311v1
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Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current Limiter
Dominique Tournier
,
Phillippe Godignon
,
Josep Montserrat
,
Dominique Planson
,
Jean-Pierre P Chante
,
et al.
ICSCRM , Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02476207v1
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On chip temperature monitoring of a SiC current limiter
Dominique Tournier
,
Philippe Godignon
,
José Millán
,
Jean-Pierre Chante
,
Dominique Planson
,
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003) , Oct 2003, Lyon, France
Communication dans un congrès
hal-02949618v1
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SiC BJT driver applied to a 2 kW inverter: Performances and limitations
Dominique Tournier
,
Pascal Bevilacqua
,
Pierre Brosselard
,
Dominique Planson
,
Bruno Allard
6th CIPS , Mar 2010, Nuremberg, Germany
Communication dans un congrès
hal-00579223v1
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Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature
Thibaut Chailloux
,
Cyril Calvez
,
Dominique Tournier
,
Dominique Planson
ECSCRM'14 , Sep 2014, Grenoble, France
Communication dans un congrès
hal-02132486v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State
Mihai Lazar
,
Fabrice Enoch
,
Farah Laariedh
,
Dominique Planson
,
Pierre Brosselard
Communication dans un congrès
hal-00661443v1
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10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization
Besar Asllani
,
Hervé Morel
,
Luong Viêt Phung
,
Dominique Planson
Article dans une revue
hal-02398585v1
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