Silicon Carbide (SiC) is considered as the wide band gap semiconductor material that can advantageously compete with silicon (Si) material for power switching devices. Compact circuit simulation models for SiC devices are of extreme importance for designing and analyzing converter circuit, in particular, if comparisons with Si devices should be performed. In this paper, three kinds of Silicon Carbide JFET samples were characterized at temperatures up to 225°C. The purpose is to establish an analytical model that is based on the physical and behavioural analysis of the SiC-JFET, taking into account the two channels and the influence of temperature. The model is developed in VHDL-AMS language, and validated with both steady-state and transient characteristics using SIMPLORER 7.0 simulator. Validation of the model shows excellent agreement with measured data.