This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V. BJTs show heterogeneous results due to unstable technology. In the contrary MOSFETs critical short circuit show bus voltage dependency with critical time of about 10µs at 600V. The failure is repetitive and characterized by a gate to source short-circuit due to self-heating. On the other hand, LV-JFET device, despite its normally-on disadvantage and higher resistivity, and thanks to its current limiting capability, shows superior SC capability with critical time over 600µs at 600V. Exploitation of this feature allowed us to produce a current limiter prototype capable to strongly limit the current in order to stand short-circuit during 200ms at 400V.